Bibliography
John
Worman
Publications, Fiction:
Synopsis: Bill, a
college junior and music major, thinks he’s found his soul mate. Now, after waiting
patiently for his true love and with emotions ready to explode, he leaves home to pursue
her. Nothing can stop him, not his tyrannical mother, not her overly protective father.
Like most young men, he believes he can accomplish anything. But, he is naïve, impulsive
and inexperienced. Just when he thinks everything is beginning to go according to his
plans, an unforeseen obstacle stands in his way, something so terrible that Bill risks
losing everything, even his sanity.
As Bill struggles, he finds
a mentor in one of his college professors. Challenged to find out who he really is, Bill
begins to unlock the cell that has imprisoned his soul since before time began. During a
Vision Quest, he stands alone in
In keeping with motifs
celebrated through authors like Richard Bach, Robert Bly and Joseph Campbell, The Frog
King is a dramatic, compelling story about how facing ones worst fears leads to
spiritual liberation.
Worman, J.W., Civility, Author's Den, A Voice
Crying in the Wilderness, Oct, 2016.
Synopsis: What we say is Forever.
Worman, J.W., The
Story, Author's
Den, A Voice Crying in the Wilderness, Oct, 2016.
Synopsis: The world is an illusion of our own making.
Worman, J.W., The
Monster of Iron Bound Bay, iUniverse, A
Voice Crying in the Wilderness, June, 2001.
Synopsis: What caused Bigfoot to
leave his territorial home? Read one possible account about a migration in
Worman, J.W., Voices
of Wisdom, iUniverse, A
Voice Crying in the Wilderness, Sept. 2000.
Synopsis: As the
voices of our prophets grow dim through the ages, new voices emerge; yet they sing old
same old song. The reality we witness is the reality we've created and we alone are
responsible for it. These voices of wisdom are lamp posts lighting the way along our
individual paths to self-fulfillment...to self-actualization. Our goal is to become fully
human.
Worman, J.W., Deathing
Miriam, iUniverse, A
Voice Crying in the Wilderness, Aug. 2000.
Synopsis: Miriam is dying of cancer. She has
finally come to grips with the inevitable. However, what can her family do to support her
in positive ways, even when their own anguish seems overwhelming?
Publications, Poetry:
Worman, J.W., Puberty Love, Across the Abyss, International Library
of Poetry, ISBN 0-7951-5054-7, 2001
Worman, J.W., Puberty
Love, International Society of Poets, International Poet of Merit Award,
Walt Disney World March 2002.
Publications, Technical:
Worman,
J.W., Yanping
Ma,
eGaN® FET Safe Operating Area and
Thermal Resistance.
Bodo
Power Magazine, September 2012
Abstract:
A
basic limitation of a power transistor is temperature. Calculations of device
temperature during operation assume that power dissipation is spread evenly over the
entire active area of the device, which is not always true. Because of negative
temperature coefficients in certain parameters of some technologies, current may crowd
into a small area, pushing up the localized temperature until failure.
Worman,
J.W., Yanping
Ma, Thermal
Performance of EPC eGaN™ FETs.
Efficient
Power Conversion Corporation. Applications Note, September 2011
Abstract:
Thermal
resistance is a major factor in determining the capabilities of discrete power devices.
From a device’s thermal characteristics both the maximum power dissipation and
Worman, J.W., New Generation Power MOSFETs and Safe Operating Area,
PowerSystems World, Oct 2002
Abstract: Because of the recent advances in
silicon processing and the control of FAB operations, new generation Power MOSFETs have
distinct advantages over older silicon technologies. This has resulted in power devices
that are able to achieve lower On-resistance, Rds(on), as well as lower Gate charge
performance when compared with older technologies. However, like all facets of the
electronics industry, there are tradeoffs. One of the most significant tradeoffs resides
in the performance of Safe Operating Area, SOA. This paper presents issues critical to the
Power MOSFET’s Safe Operating Area performance and shows that the correct selection
of a power device can be critical for many applications.
Worman, J.W., New Generation Power MOSFETs and Safe Operating Area,
PowerSystems World, Oct 2002
Abstract: Because of the recent advances in
silicon processing and the control of FAB operations, new generation Power MOSFETs have
distinct advantages over older silicon technologies. This has resulted in power devices
that are able to achieve lower On-resistance, Rds(on), as well as lower Gate charge
performance when compared with older technologies. However, like all facets of the
electronics industry, there are tradeoffs. One of the most significant tradeoffs resides
in the performance of Safe Operating Area, SOA. This paper presents issues critical to the
Power MOSFET’s Safe Operating Area performance and shows that the correct selection
of a power device can be critical for many applications.
Worman, J.W., MOSFET Synchronous Rectifiers Require Attention to
Gate Charge, Power Electronics Technology, Dec. 2001.
Abstract: Operating a power MOSFET device as a
synchronous rectifier requires performance specifications not supplied on most
manufacturers' data sheets. While MOSFET On-resistance, Rds(on), is considered the most
important electrical parameter, gate charge must also be considered because during third
quadrant operation, the amount of instantaneous current required to fully enhance the
MOSFET channel will directly influence the total converter efficiency. In consideration of
operating the Power MOSFET device as a synchronous rectifier for telecom and VRM DC to DC
converters, the second-quadrant capacitance and third-quadrant gate charge was evaluated
for the ISL9N310AD3, 10 milliohm, 35-amp Logic-level Trench transistor. The objective of
this study was to determine if second-quadrant capacitance and third-quadrant gate charge
values should be placed on the MOSFET data sheet, and, if so, what are the specification
parameters?
Worman, J.W., MOSFET Inductive Switching Performance,
Power Systems World 2001,
Abstract: Inductive switching performance is a
major concern when selecting Power MOSFETs for power conversion technologies.
Unfortunately, most MOSFET manufacturers do not supply this information on their data
sheets. However, since resistive switching performance is supplied, Power MOSFET users
often ask: Do resistive and inductive switching performance have any correlation with each
other? Also, do inductive switching times and energy losses vary over temperature? This
paper investigates both resistive and inductive switching times and losses and makes
recommendations for future data sheet specifications and graphs.
Worman, J.W., Power MOSFET Thermal Ratings Reviewed,
Darnel.com, PowerPulse, Aug. 2000.
Abstract: Steady state thermal resistance, RqJC, is the thermal resistance between a semiconductor
device's junction and a specified reference point on the device's case or package. For
modern power devices, this reference point is on the outside of the device header directly
beneath the semiconductor die. RqJC, by definition, requires that this reference point
be thermally stable, that it not change temperature during thermal characterization of a
device's packaging system. Device characterization attempts to accomplish this ideal by
means of an "effectively infinite" heat sink, held to +25° C. This paper
further defines what constitutes an "effectively infinite" heat sink.
Worman, J.W., SPICE Modeling of Power MOSFET Thermal Impedance for
Nonrectangular Power Pulses, Power Systems World 2000,
Abstract: The thermal impedance graph in a
manufacturer’s data sheet is built around the rectangular power pulse. While this
rectangular wave shape is acceptable for many switching applications, it does not address
irregular or exponential wave shapes like unclamped inductive switching or the active
clamp. Modern digital oscilloscopes and computer simulation allows the circuit designer to
overcome this obstacle, however. This paper demonstrates a practical method for SPICE
simulation of real world waveforms in order to predict MOSFET junction temperature rise
and compares that model to empirical data taken in the laboratory.
Worman, J.W., New Circuit Improves Accuracy of IGBT Transient
Thermal Impedance Test, PCIM Magazine, February, 2000.
Abstract: Thermal characterization of
semiconductor devices has been ongoing in laboratories for the last forty years and
techniques are well known. However, given the dated equipment that many manufacturers use,
are they accurate? This paper reviews Transient Thermal Impedance (ZqJC) curves for the Insulated Gate Bipolar Transistor
(IGBT) then addresses test system measurement errors and investigates a new test circuit
for evaluating transient pulse widths for one millisecond and narrower.
Ronan, H., Worman, J.W., Power Rectifier UIS Capability, PCIM,
Abstract: Unclamped Inductive Switching (UIS)
is a major factor in specifying modern power rectifiers. It enhances system reliability.
However, UIS significance for power rectifiers is not widely understood, neither is the
method for properly specifying UIS ratings in a specific application. This paper explores
UIS test methodology, UIS capability, UIS energy ratings and avalanche conditions created
from non-inductive waveforms.
Worman, J.W., Sub-millisecond Thermal Impedance and Steady State
Thermal Resistance Explored, Semiconductor Thermal Measurement and Management
Symposium, IEEE, March, 1999.
Abstract: Thermal characterization of
semiconductor devices has been ongoing in laboratories for the last forty years and
techniques are well known. But given the dated equipment that many manufacturers use, are
these techniques accurate? This paper explores three areas. 1) Thermal Impedance and
Thermal Resistance measurement methods for Power MOSFETs. 2) Addresses test system
measurement errors and investigates a new test circuit for evaluating transient pulse
widths for one millisecond and narrower. 3) Shows that not all characterization heat sinks
are created equal.
Gillberg, J., Shekhawat, S., Shilale, P., Presented by: Worman, J.W., Low
Horse Power IGBT Module Capabilities Made Available Through Existing IGBTs and Isolation
Material Performance, Power Electronics Conference, Power Systems World '98, Santa
Clara, CA, Nov. 8, 1998.
Abstract: Using the performance of present
generation IGBTs coupled with advancements made in IMS and DBC technologies has allowed
the development of low horse power integrated power modules. These modules have the
ability to be smaller, higher in power density and cost competitive with alternative
discrete solutions, while offering the expected advantages of a single electrically
isolated component.
Worman, J.W., Wodarczyk, Paul, Innovative Low Rds(on) MOSFETs,
PCIM/HFPC, 98, Intertec International, Inc., Nov. 1998.
Abstract: To address the needs of the modern
circuit designer, the HUF75300 series N-Channel power MOSFET is manufactured using the
innovative UltraFETTM process. It provides higher conduction and
switching efficiencies through lower on-resistance, Rds(on), lower Gate charge, Qgd, as
well as a faster intrinsic diode while maintaining the MegaFET ruggedness the industry
knows so well. This paper compares both the multiple polygonal cell structure (the
MegaFET) and the planar structure (the newly introduced UltraFETTM)
technologies, highlighting reasons why the UltraFETTM is the logical
choice for new state of the art switchmode designs.
Worman, J.W., Paralleling New Generation Power MOSFETs,
PCIM/HFPC, 98, Intertec International, Inc., Nov. 1998.
Abstract: Current distribution within a group
of paralleled devices is of utmost concern to the designer. To provide for a stable and
reliable operation several questions must be addressed. Is there any asymmetrical current
sharing? If so, some devices may run hotter than others. Does the asymmetry cause any
significant increase in total power dissipation? What is the maximum junction temperature
of the devices? Also, is any device operating near or outside its safe operating area
(SOA)? The answers to these questions depend on the specific operating state of each of
the devices. This paper discusses both gain and temperature coefficient considerations for
new generation Power MOSFETs. Suggestions are made which allow for simple and economical
device matching in the field.
Ronan, H,. Worman, J.W., Power Rectifier UIS Capability, Power
Conversion & Intelligent Motion, Oct. 1998.
Abstract: Unclamped Inductive Switching (UIS)
is a major factor in specifying modern power rectifiers. It enhances system reliability.
However, UIS significance for power rectifiers is not widely understood, neither is the
method for properly specifying UIS ratings in a specific application. This paper explores
UIS test methodology, UIS capability, UIS energy ratings and avalanche conditions created
from non-inductive waveforms.
Worman, J.W., Wodarczyk, Paul, Innovative Low Rds(on) MOSFETs,
PCIM International, 98, Tokyo, Japan, Apr. 1998.
Abstract: To address the needs of the modern
circuit designer, the HUF75300 series N-Channel power MOSFET is manufactured using the
innovative UltraFETTM process. It provides higher conduction and
switching efficiencies through lower on-resistance, Rds(on), lower Gate charge, Qgd, as
well as a faster intrinsic diode while maintaining the MegaFET ruggedness the industry
knows so well. This paper compares both the multiple polygonal cell structure (the
MegaFET) and the planar structure (the newly introduced UltraFETTM)
technologies, highlighting reasons why the UltraFETTM is the logical
choice for new state of the art switchmode designs.
Worman, J.W., Wodarczyk, Paul, Ultra Low Rds(on) MOSFETS,
PCIM/HFPC, 97, Intertec International, Inc., Sept. 1997.
Abstract: Conduction and switching losses are
major factors in specifying semiconductor power switches. The lower these losses, the
greater the power efficiency for a given die size. This is important for modern switching
regulators, switching converters, motor drivers, relay drivers, low-voltage buss-switches,
and power management systems. To address the needs of the modern circuit designer, the
HUF75300 series N-Channel power MOSFET is manufactured using the patented UltraFETTM
process. It provides higher conduction and switching efficiencies through lower
on-resistance, Rds(on), lower Gate charge, Qg, as well as a faster intrinsic diode while
maintaining the MegaFET ruggedness the industry knows so well. This paper highlights the
reasons the UltraFETTM is the logical choice for new designs.
Worman, J.W., Using power MOSFETs in unclamped inductive switching
applications, Powertechniques Magazine, Oct. 1988. Peer Review,
Abstract: UIS testing has become a major
factor in specifying Power MOSFETs, but its significance in still not widely understood,
neither is the method used to perform UIS screening. This paper discusses UIS basics,
testing methodologies and failure mechanisms.
Zabrsa, E., Presented by: Worman, J.W., The Effects of Printed
Circuit Board Layout and Measurements Systems on Power MOSFET Switching Performance,
Third Annual High Frequency Power Conversion Conference, San Diego, CA, May 1988.
Abstract: Comparisons of Power MOSFET
switching times can be confusing. There are differences on device data sheets which are
puzzling, at least, until one compares test methods. With each manufacturer fabricating
his own test fixtures and using available test equipment, it is no surprise that switching
time data lacks consistency. This paper reviews test fixture design and optimization.
Worman, J.W.,
Abstract: As with any multiparameter
monitoring system, sensor placement and reliability present potential difficulties. To
maintain the ECG lead integrity the equipment operator must be able to instantaneously
focus his or her attention to he correct ECG electrode fault, should such a fault occur.
This paper addresses an innovative fault detection methodology. It proposes superimposing
error signals onto each ECG electrode with appropriate detection circuitry.
Worman, J.W.,
Abstract: The nation is faced with an
increasing demand for health service accompanied by limited health manpower and rapidly
escalating costs. In many states, because of great distances and physical barriers in
terrain, rural communities are barred from ready access to the sophisticated medical
technologies found in more sophisticated cities. Until now, consultation was limited to
the use of a telephone or two way radio which usually resulted in the transport of
patients to a larger and better equipped medical facility. This often occurred because the
consulting physician was unwilling to make diagnosis on less than standardized data or the
evidence of his own controlled examination. Among the major problems face by physicians
and paramedical personnel in both urban and rural areas of the country is their difficulty
in obtaining prompt, easily accessible medical care. In order to provide the physician and
the paramedic team with man-machine capabilities equal to or greater than the physician's
own presence at the bed side, we have conceived, built and tested a multi-parameter, light
weight portable electronic system which provides the physician and paramedical personnel
with extensive, but inexpensive, real time diagnostic examination and communication
capabilities.
Worman, J.W.,
Abstract: Ultrasonic Doppler blood flow
measurements have come into wide use where accurate noninvasive flow measurements are
required. However, because Doppler techniques have an extremely high susceptibility to
artifacts caused by movements along the Doppler probe to patient skin interface, these
systems have not been well received by areas of medicine other than in controlled
environment of a clinic or operating room. This is unfortunate because Doppler techniques
have the potential of playing important roles by both the emergency room and the paramedic
milieu. This is evidenced in two areas: one being the measurement of blood pressure where
measurements are seriously limited when arterial pressures fall abnormally low as in
hemorrhagic shock; and second, when CPR is administered to a cardiac arrest victim and
immediate feedback as to the status of arterial flow is required. This paper describes a
dual Doppler probe and balanced modulator system that algebraically removes background
artifacts.
Worman, J.W., Silverstein, M.E., Calkins, J.M., New Telemetry
Devices as the Basis for a Rural Health Network, 31st Annual Conference in Engineering in
Medicine and Biology, IEEE, Oct. 1978.
Abstract: The nation is faced with an
increasing demand for health service. Among the major problems faced by physicians and
smaller hospitals remotely located is their inability to obtain prompt, complete and
easily accessible consolation. Even when telephone or radio communication is readily
available, the limits of voice communication is discouraging. When the requesting
physician is unable to examine the patient himself, the specialist is dependent upon the
verbal account of the requesting physician which leads to an unwillingness to provide
definitive advice and decisions. Therefore, to accommodate the exchange of data by the
physician or paramedic in a remote location, an electronic system has been designed to
transmit and record physiological parameters as well as hard copy documentation.
Memberships, Honors and Awards:
Phi-Kapp-Phi Honor Society, Northern
Society of Automotive Engineers, SAE. , Fairchild
Semiconductor Inc.
Golden Quill Award, Intersil Corp. 1998, 1999, 2000.
Strathmore's Who's Who, Honorary Life Member.
Historical Society, International Who's Who, Member
2001-2002.
Global Directory Who's Who, 2002-2003.
© Copyright Feb. 2016
