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Bibliography
John Worman


Publications, Fiction:

 

Worman, J.W., The Frog King, ISBN: 978-0-595-50110-6 (Cloth), ISBN: 978-0-595-50195-3 (Paperback), ISBN: 978-0-595-61410-3 (ebook), iUniverse, Aug, 2008.

Synopsis: Bill, a college junior and music major, thinks he’s found his soul mate. Now, after waiting patiently for his true love and with emotions ready to explode, he leaves home to pursue her. Nothing can stop him, not his tyrannical mother, not her overly protective father. Like most young men, he believes he can accomplish anything. But, he is nave, impulsive and inexperienced. Just when he thinks everything is beginning to go according to his plans, an unforeseen obstacle stands in his way, something so terrible that Bill risks losing everything, even his sanity.

As Bill struggles, he finds a mentor in one of his college professors. Challenged to find out who he really is, Bill begins to unlock the cell that has imprisoned his soul since before time began. During a Vision Quest, he stands alone in Skull Valley, Arizona. Out of his tortured past, a mortal enemy has once again found him and a life and death battle ensues.

In keeping with motifs celebrated through authors like Richard Bach, Robert Bly and Joseph Campbell, The Frog King is a dramatic, compelling story about how facing ones worst fears leads to spiritual liberation.


Worman, J.W., Civility, Author's Den, A Voice Crying in the Wilderness, Oct, 2016.

Synopsis:  What we say is Forever.


Worman, J.W., The Story, Author's Den, A Voice Crying in the Wilderness, Oct, 2016.

Synopsis:  The world is an illusion of our own making.


Worman, J.W., The Monster of Iron Bound Bay, iUniverse, A Voice Crying in the Wilderness, June, 2001.

Synopsis:  What caused Bigfoot to leave his territorial home? Read one possible account about a migration in Southern California.


Worman, J.W., Voices of Wisdom, iUniverse, A Voice Crying in the Wilderness, Sept. 2000.

Synopsis:  As the voices of our prophets grow dim through the ages, new voices emerge; yet they sing old same old song. The reality we witness is the reality we've created and we alone are responsible for it. These voices of wisdom are lamp posts lighting the way along our individual paths to self-fulfillment...to self-actualization. Our goal is to become fully human.


Worman, J.W., Deathing Miriam, iUniverse, A Voice Crying in the Wilderness, Aug. 2000.

Synopsis: Miriam is dying of cancer. She has finally come to grips with the inevitable. However, what can her family do to support her in positive ways, even when their own anguish seems overwhelming?

 



Publications, Poetry:

Worman, J.W., Puberty Love, Across the Abyss, International Library of Poetry, ISBN 0-7951-5054-7, 2001

Worman, J.W., Puberty Love, International Society of Poets, International Poet of Merit Award, Walt Disney World March 2002.



Publications, Technical:

Worman, J.W., Yanping Ma, eGaN FET Safe Operating Area and Thermal Resistance. Bodo Power Magazine, September 2012

Abstract:   A basic limitation of a power transistor is temperature.  Calculations of device temperature during operation assume that power dissipation is spread evenly over the entire active area of the device, which is not always true.  Because of negative temperature coefficients in certain parameters of some technologies, current may crowd into a small area, pushing up the localized temperature until failure.   Safe Operating Area (SOA) curves describe the range of voltage and current and the length of time under which a device may operate without failure. The SOA is an indicator of the device’s ability to transfer heat away from a resistive junction and, thus, is directly dependent on a device’s Thermal Resistance (RthJC).  The more efficient a device is at getting rid of generated heat, the lower RthJC and the better the SOA performance.  eGaN FETs from Efficient Power Conversion (EPC) exhibit a positive temperature coefficient across their entire operating range and can therefore be expected to operate with only voltage, current, and temperature limitations.  This paper will describe the thermally derived SOA of power eGaN FETs which demonstrate very good SOA characteristics while maintaining superior RDS(ON).  The paper will then compare these thermally derived calculations with measured results.


Worman, J.W., Yanping Ma, Thermal Performance of EPC eGaN™ FETs. Efficient Power Conversion Corporation. Applications Note, September 2011

 

Abstract:   Thermal resistance is a major factor in determining the capabilities of discrete power devices. From a device’s thermal characteristics both the maximum power dissipation and maximum current can be derived for user applications. While the thermal performance of traditional silicon MOSFETs is well understood, measuring the thermal performance of eGaN™ FETs requires some further explanation. This Applications Note investigates the testing method and results of thermal resistance measurements on eGaN FETs.

 


Worman, J.W., New Generation Power MOSFETs and Safe Operating Area, PowerSystems World, Oct 2002

Abstract: Because of the recent advances in silicon processing and the control of FAB operations, new generation Power MOSFETs have distinct advantages over older silicon technologies. This has resulted in power devices that are able to achieve lower On-resistance, Rds(on), as well as lower Gate charge performance when compared with older technologies. However, like all facets of the electronics industry, there are tradeoffs. One of the most significant tradeoffs resides in the performance of Safe Operating Area, SOA. This paper presents issues critical to the Power MOSFET’s Safe Operating Area performance and shows that the correct selection of a power device can be critical for many applications.


Worman, J.W., New Generation Power MOSFETs and Safe Operating Area, PowerSystems World, Oct 2002

Abstract: Because of the recent advances in silicon processing and the control of FAB operations, new generation Power MOSFETs have distinct advantages over older silicon technologies. This has resulted in power devices that are able to achieve lower On-resistance, Rds(on), as well as lower Gate charge performance when compared with older technologies. However, like all facets of the electronics industry, there are tradeoffs. One of the most significant tradeoffs resides in the performance of Safe Operating Area, SOA. This paper presents issues critical to the Power MOSFET’s Safe Operating Area performance and shows that the correct selection of a power device can be critical for many applications.


Worman, J.W., MOSFET Synchronous Rectifiers Require Attention to Gate Charge, Power Electronics Technology, Dec. 2001.

Abstract: Operating a power MOSFET device as a synchronous rectifier requires performance specifications not supplied on most manufacturers' data sheets. While MOSFET On-resistance, Rds(on), is considered the most important electrical parameter, gate charge must also be considered because during third quadrant operation, the amount of instantaneous current required to fully enhance the MOSFET channel will directly influence the total converter efficiency. In consideration of operating the Power MOSFET device as a synchronous rectifier for telecom and VRM DC to DC converters, the second-quadrant capacitance and third-quadrant gate charge was evaluated for the ISL9N310AD3, 10 milliohm, 35-amp Logic-level Trench transistor. The objective of this study was to determine if second-quadrant capacitance and third-quadrant gate charge values should be placed on the MOSFET data sheet, and, if so, what are the specification parameters?


Worman, J.W.,  MOSFET Inductive Switching Performance, Power Systems World 2001, Rosemont, IL.

Abstract: Inductive switching performance is a major concern when selecting Power MOSFETs for power conversion technologies. Unfortunately, most MOSFET manufacturers do not supply this information on their data sheets. However, since resistive switching performance is supplied, Power MOSFET users often ask: Do resistive and inductive switching performance have any correlation with each other? Also, do inductive switching times and energy losses vary over temperature? This paper investigates both resistive and inductive switching times and losses and makes recommendations for future data sheet specifications and graphs.


Worman, J.W., Power MOSFET Thermal Ratings Reviewed, Darnel.com, PowerPulse, Aug. 2000.

Abstract: Steady state thermal resistance, RqJC, is the thermal resistance between a semiconductor device's junction and a specified reference point on the device's case or package. For modern power devices, this reference point is on the outside of the device header directly beneath the semiconductor die. RqJC, by definition, requires that this reference point be thermally stable, that it not change temperature during thermal characterization of a device's packaging system. Device characterization attempts to accomplish this ideal by means of an "effectively infinite" heat sink, held to +25 C. This paper further defines what constitutes an "effectively infinite" heat sink.


Worman, J.W., SPICE Modeling of Power MOSFET Thermal Impedance for Nonrectangular Power Pulses, Power Systems World 2000, Nuremberg, June, 2000.

Abstract: The thermal impedance graph in a manufacturer’s data sheet is built around the rectangular power pulse. While this rectangular wave shape is acceptable for many switching applications, it does not address irregular or exponential wave shapes like unclamped inductive switching or the active clamp. Modern digital oscilloscopes and computer simulation allows the circuit designer to overcome this obstacle, however. This paper demonstrates a practical method for SPICE simulation of real world waveforms in order to predict MOSFET junction temperature rise and compares that model to empirical data taken in the laboratory.


Worman, J.W., New Circuit Improves Accuracy of IGBT Transient Thermal Impedance Test, PCIM Magazine, February, 2000.

Abstract: Thermal characterization of semiconductor devices has been ongoing in laboratories for the last forty years and techniques are well known. However, given the dated equipment that many manufacturers use, are they accurate? This paper reviews Transient Thermal Impedance (ZqJC) curves for the Insulated Gate Bipolar Transistor (IGBT) then addresses test system measurement errors and investigates a new test circuit for evaluating transient pulse widths for one millisecond and narrower.


Ronan, H., Worman, J.W., Power Rectifier UIS Capability, PCIM, Europe, March 1999. Reprint from PCIM magazine, Oct., 1998.

Abstract: Unclamped Inductive Switching (UIS) is a major factor in specifying modern power rectifiers. It enhances system reliability. However, UIS significance for power rectifiers is not widely understood, neither is the method for properly specifying UIS ratings in a specific application. This paper explores UIS test methodology, UIS capability, UIS energy ratings and avalanche conditions created from non-inductive waveforms.


Worman, J.W., Sub-millisecond Thermal Impedance and Steady State Thermal Resistance Explored, Semiconductor Thermal Measurement and Management Symposium, IEEE, March, 1999.

Abstract: Thermal characterization of semiconductor devices has been ongoing in laboratories for the last forty years and techniques are well known. But given the dated equipment that many manufacturers use, are these techniques accurate? This paper explores three areas. 1) Thermal Impedance and Thermal Resistance measurement methods for Power MOSFETs. 2) Addresses test system measurement errors and investigates a new test circuit for evaluating transient pulse widths for one millisecond and narrower. 3) Shows that not all characterization heat sinks are created equal.


Gillberg, J., Shekhawat, S., Shilale, P., Presented by: Worman, J.W., Low Horse Power IGBT Module Capabilities Made Available Through Existing IGBTs and Isolation Material Performance, Power Electronics Conference, Power Systems World '98, Santa Clara, CA, Nov. 8, 1998.

Abstract: Using the performance of present generation IGBTs coupled with advancements made in IMS and DBC technologies has allowed the development of low horse power integrated power modules. These modules have the ability to be smaller, higher in power density and cost competitive with alternative discrete solutions, while offering the expected advantages of a single electrically isolated component.


Worman, J.W., Wodarczyk, Paul, Innovative Low Rds(on) MOSFETs, PCIM/HFPC, 98, Intertec International, Inc., Nov. 1998.

Abstract: To address the needs of the modern circuit designer, the HUF75300 series N-Channel power MOSFET is manufactured using the innovative UltraFETTM process. It provides higher conduction and switching efficiencies through lower on-resistance, Rds(on), lower Gate charge, Qgd, as well as a faster intrinsic diode while maintaining the MegaFET ruggedness the industry knows so well. This paper compares both the multiple polygonal cell structure (the MegaFET) and the planar structure (the newly introduced UltraFETTM) technologies, highlighting reasons why the UltraFETTM is the logical choice for new state of the art switchmode designs.


Worman, J.W., Paralleling New Generation Power MOSFETs, PCIM/HFPC, 98, Intertec International, Inc., Nov. 1998.

Abstract: Current distribution within a group of paralleled devices is of utmost concern to the designer. To provide for a stable and reliable operation several questions must be addressed. Is there any asymmetrical current sharing? If so, some devices may run hotter than others. Does the asymmetry cause any significant increase in total power dissipation? What is the maximum junction temperature of the devices? Also, is any device operating near or outside its safe operating area (SOA)? The answers to these questions depend on the specific operating state of each of the devices. This paper discusses both gain and temperature coefficient considerations for new generation Power MOSFETs. Suggestions are made which allow for simple and economical device matching in the field.


Ronan, H,. Worman, J.W., Power Rectifier UIS Capability, Power Conversion & Intelligent Motion, Oct. 1998.

Abstract: Unclamped Inductive Switching (UIS) is a major factor in specifying modern power rectifiers. It enhances system reliability. However, UIS significance for power rectifiers is not widely understood, neither is the method for properly specifying UIS ratings in a specific application. This paper explores UIS test methodology, UIS capability, UIS energy ratings and avalanche conditions created from non-inductive waveforms.


Worman, J.W., Wodarczyk, Paul, Innovative Low Rds(on) MOSFETs, PCIM International, 98, Tokyo, Japan, Apr. 1998.

Abstract: To address the needs of the modern circuit designer, the HUF75300 series N-Channel power MOSFET is manufactured using the innovative UltraFETTM process. It provides higher conduction and switching efficiencies through lower on-resistance, Rds(on), lower Gate charge, Qgd, as well as a faster intrinsic diode while maintaining the MegaFET ruggedness the industry knows so well. This paper compares both the multiple polygonal cell structure (the MegaFET) and the planar structure (the newly introduced UltraFETTM) technologies, highlighting reasons why the UltraFETTM is the logical choice for new state of the art switchmode designs.


Worman, J.W., Wodarczyk, Paul, Ultra Low Rds(on) MOSFETS, PCIM/HFPC, 97, Intertec International, Inc., Sept. 1997.

Abstract: Conduction and switching losses are major factors in specifying semiconductor power switches. The lower these losses, the greater the power efficiency for a given die size. This is important for modern switching regulators, switching converters, motor drivers, relay drivers, low-voltage buss-switches, and power management systems. To address the needs of the modern circuit designer, the HUF75300 series N-Channel power MOSFET is manufactured using the patented UltraFETTM process. It provides higher conduction and switching efficiencies through lower on-resistance, Rds(on), lower Gate charge, Qg, as well as a faster intrinsic diode while maintaining the MegaFET ruggedness the industry knows so well. This paper highlights the reasons the UltraFETTM is the logical choice for new designs.


Worman, J.W., Using power MOSFETs in unclamped inductive switching applications, Powertechniques Magazine, Oct. 1988. Peer Review, Blackburn, D. J., National Bureau of Standards.

Abstract: UIS testing has become a major factor in specifying Power MOSFETs, but its significance in still not widely understood, neither is the method used to perform UIS screening. This paper discusses UIS basics, testing methodologies and failure mechanisms.


Zabrsa, E., Presented by: Worman, J.W., The Effects of Printed Circuit Board Layout and Measurements Systems on Power MOSFET Switching Performance, Third Annual High Frequency Power Conversion Conference, San Diego, CA, May 1988.

Abstract: Comparisons of Power MOSFET switching times can be confusing. There are differences on device data sheets which are puzzling, at least, until one compares test methods. With each manufacturer fabricating his own test fixtures and using available test equipment, it is no surprise that switching time data lacks consistency. This paper reviews test fixture design and optimization.


Worman, J.W., Silverstein, M.E., An Electrocardiogram Lead Fault Detector, 32nd Annual Conference on Engineering in Medicine and Biology, IEEE Apr. 1980.

Abstract: As with any multiparameter monitoring system, sensor placement and reliability present potential difficulties. To maintain the ECG lead integrity the equipment operator must be able to instantaneously focus his or her attention to he correct ECG electrode fault, should such a fault occur. This paper addresses an innovative fault detection methodology. It proposes superimposing error signals onto each ECG electrode with appropriate detection circuitry.


Worman, J.W., Silverstein, M.E., A Portable Multi-Sensor Telemetry System for a Rural Health Network, IEEE, Apr. 1979.

Abstract: The nation is faced with an increasing demand for health service accompanied by limited health manpower and rapidly escalating costs. In many states, because of great distances and physical barriers in terrain, rural communities are barred from ready access to the sophisticated medical technologies found in more sophisticated cities. Until now, consultation was limited to the use of a telephone or two way radio which usually resulted in the transport of patients to a larger and better equipped medical facility. This often occurred because the consulting physician was unwilling to make diagnosis on less than standardized data or the evidence of his own controlled examination. Among the major problems face by physicians and paramedical personnel in both urban and rural areas of the country is their difficulty in obtaining prompt, easily accessible medical care. In order to provide the physician and the paramedic team with man-machine capabilities equal to or greater than the physician's own presence at the bed side, we have conceived, built and tested a multi-parameter, light weight portable electronic system which provides the physician and paramedical personnel with extensive, but inexpensive, real time diagnostic examination and communication capabilities.


Worman, J.W., Silverstein, M.E., Artifact Removal from Doppler Flow Measurements, International Conference on Finite Elements in Biomechanics, Nov. 1978.

Abstract: Ultrasonic Doppler blood flow measurements have come into wide use where accurate noninvasive flow measurements are required. However, because Doppler techniques have an extremely high susceptibility to artifacts caused by movements along the Doppler probe to patient skin interface, these systems have not been well received by areas of medicine other than in controlled environment of a clinic or operating room. This is unfortunate because Doppler techniques have the potential of playing important roles by both the emergency room and the paramedic milieu. This is evidenced in two areas: one being the measurement of blood pressure where measurements are seriously limited when arterial pressures fall abnormally low as in hemorrhagic shock; and second, when CPR is administered to a cardiac arrest victim and immediate feedback as to the status of arterial flow is required. This paper describes a dual Doppler probe and balanced modulator system that algebraically removes background artifacts.


Worman, J.W., Silverstein, M.E., Calkins, J.M., New Telemetry Devices as the Basis for a Rural Health Network, 31st Annual Conference in Engineering in Medicine and Biology, IEEE, Oct. 1978.

Abstract: The nation is faced with an increasing demand for health service. Among the major problems faced by physicians and smaller hospitals remotely located is their inability to obtain prompt, complete and easily accessible consolation. Even when telephone or radio communication is readily available, the limits of voice communication is discouraging. When the requesting physician is unable to examine the patient himself, the specialist is dependent upon the verbal account of the requesting physician which leads to an unwillingness to provide definitive advice and decisions. Therefore, to accommodate the exchange of data by the physician or paramedic in a remote location, an electronic system has been designed to transmit and record physiological parameters as well as hard copy documentation.



Memberships, Honors and Awards:

Phi-Kapp-Phi Honor Society, Northern Arizona University, May, 1976

Society of Automotive Engineers, SAE. , Fairchild Semiconductor Inc.

Golden Quill Award, Intersil Corp. 1998, 1999, 2000.

Strathmore's Who's Who, Honorary Life Member.

Historical Society, International Who's Who, Member 2001-2002.

Global Directory Who's Who, 2002-2003.

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Copyright Feb. 2016